| PART |
Description |
Maker |
| 124141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 124141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128144 |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| 115161H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128254 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode，盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc.
ETC
OSRAM GmbH
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PDI-E940 |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E809 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E808-A |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| PDI-E825 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|
